by lylelin
AutoCAD Architecture 2014 Herunterladen Frei 32 Bits
Any set of instructions will be useful.
and a reduction in the size of an IC chip can be also prevented.
To provide this and solve the above-described problems, an object of the present invention is to provide a semiconductor device in which a through electrode is arranged in an inner layer of an inner electrode which is to be connected to a wiring electrode, thereby mounting efficiency is improved.
According to one aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of forming at least one conductive layer on a semiconductor substrate, forming a resist pattern for exposing a through electrode on the at least one conductive layer, forming the at least one conductive layer into a shape of the through electrode in a portion other than the through electrode by a photolithography method, and forming a through electrode electrically connected to the at least one conductive layer and connected to an external electrode through a wiring electrode.
Preferably, the resist pattern has a structure in which a size of an opening is gradually reduced toward an inside of the semiconductor substrate.
Preferably, a barrier metal layer is arranged between the through electrode and the at least one conductive layer.
Preferably, the barrier metal layer is formed by sequentially stacking a titanium (Ti) layer, a titanium nitride (TiN) layer, a titanium dioxide (TiO2) layer and a tungsten (W) layer.
Preferably, the through electrode is formed by sequentially stacking a titanium (Ti) layer, a titanium nitride (TiN) layer, a titanium dioxide (TiO2) layer and a tungsten (W) layer, and the at least one conductive layer is formed on an exposed surface of the through electrode.
Preferably, the resist pattern has a structure in which a width of the opening is gradually reduced toward an inside of the semiconductor substrate.
Preferably, the through electrode is a stud electrode, and the semiconductor device is a ball grid array (BGA) type semiconductor device.
The above and further objects and features of the invention will more fully be apparent from the following detailed description with accompanying drawings.The electronic circuits of semiconductor devices, including transistor devices, employ numerous electronic components that are integrated within a semiconductor substrate (wafer). To operate properly, these integrated electronic components must be connected to each other by patterns of metal interconnections. These interconnections
https://colab.research.google.com/drive/186ZC6FpiLE5myny5Linw89arhTv9YuIH
https://colab.research.google.com/drive/1Wvml-m4uSB0h3x68j0fWF8hX8p8bDGLp
https://colab.research.google.com/drive/1XseVFn1qpYHEDa6ACy9Jo-JYU2ncu79m
https://colab.research.google.com/drive/1uFzfkfYWnaRKPWlc7Abr6lOHcS3cbB0E
https://colab.research.google.com/drive/1ilIxXm_rNFTNNi-UTT6W8UOYK_OJ7wxT
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