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The present invention relates to a method of manufacturing a semiconductor device and, more particularly, to a method of manufacturing a semiconductor device capable of improving the sharpness of a circuit pattern by reducing or preventing a resist residue.
2. Description of the Related Art
A semiconductor device includes a circuit pattern formed on a semiconductor substrate, and an interlayer insulating layer for insulating the circuit pattern and, therefore, there is a demand for the circuit pattern to be formed with a high degree of sharpness.
A conventional method of forming a circuit pattern is described below by taking as an example the formation of an aluminum circuit pattern.
First, a conductive layer such as aluminum is formed on an insulating layer on a semiconductor substrate. Next, the conductive layer is patterned by using a chemical etching process. The etching residue produced by the process is removed using a chemical washing solution, and a resist pattern is formed. Using the resist pattern as a mask, the surface of the insulating layer is etched. At this time, a part of the conductive layer exposed through the insulating layer is removed due to the etching of the insulating layer.
Here, a chemical washing solution has been used to remove the etching residue. Generally, a chemical washing solution contains ammonia or hydrogen peroxide. However, when ammonia or hydrogen peroxide is used, a chemical reaction between the conductive layer and the chemical washing solution occurs, resulting in a state in which the conductive layer reacts with or dissolves in the chemical washing solution. This is referred to as an etching residue problem.
To solve this problem, a method of using deionized water to remove the etching residue has been proposed. However, when deionized water is used, a chemical reaction occurs due to a component in the deionized water, and thus a state in which the conductive layer reacts or dissolves in the deionized water is caused, causing the same problems as those in the chemical washing process.
Also, a method of rinsing the conductive layer with pure water after the etching residue has been removed, and then performing a chemical washing process, has been proposed (Japanese Patent Application Laid-Open No. 2000-160899, No. 2001-38204).
In the method proposed in Japanese Patent
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